All MOSFET. APT45M100J Datasheet

 

APT45M100J Datasheet and Replacement


   Type Designator: APT45M100J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 960 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 1555 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SOT-227
 

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APT45M100J Datasheet (PDF)

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APT45M100J

APT45M100J 1000V, 45A, 0.18 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

 9.1. Size:375K  apt
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APT45M100J

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APT45M100J

 9.3. Size:457K  apt
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APT45M100J

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

Datasheet: APT42F50S , APT43F60B2 , APT43F60L , APT43M60B2 , APT43M60L , APT44F80B2 , APT44F80L , APT4530AN , 4435 , APT47F60J , APT47M60J , APT47N60BC3G , APT47N60BCFG , APT47N60SC3G , APT47N65BC3G , APT48M80B2 , APT48M80L .

History: SI4622DY | VBZL80N03

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