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APT45M100J MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT45M100J
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 960 W
   Предельно допустимое напряжение сток-исток |Uds|: 1000 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 45 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 570 nC
   Время нарастания (tr): 75 ns
   Выходная емкость (Cd): 1555 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.18 Ohm
   Тип корпуса: SOT-227

 Аналог (замена) для APT45M100J

 

 

APT45M100J Datasheet (PDF)

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 apt45m100j.pdf

APT45M100J APT45M100J

APT45M100J 1000V, 45A, 0.18 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon

 9.1. Size:375K  apt
 apt4530an apt5025an apt5030an.pdf

APT45M100J APT45M100J

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APT45M100J APT45M100J

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 apt45gp120jdq220.pdf

APT45M100J APT45M100J

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

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APT45M100J APT45M100J

TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 9.5. Size:196K  apt
 apt45gp120b2df2.pdf

APT45M100J APT45M100J

APT45GP120B2DF2TYPICAL PERFORMANCE CURVESAPT45GP120B2DF21200VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCC Low Conduction Loss 10

 9.6. Size:205K  apt
 apt45gp120jdf2.pdf

APT45M100J APT45M100J

TYPICAL PERFORMANCE CURVES APT45GP120JDF2APT45GP120JDF21200VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency "UL Recognized"ISOTOPswitchmode power supplies.C Low Conduction Loss

 9.7. Size:457K  apt
 apt45gp120jdq2.pdf

APT45M100J APT45M100J

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 9.8. Size:97K  apt
 apt45gp120j.pdf

APT45M100J APT45M100J

APT45GP120J1200VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency "UL Recognized"ISOTOPswitchmode power supplies.C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate

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 apt45gp120bg.pdf

APT45M100J APT45M100J

APT45GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.E Low Conduction Loss 100 kHz operation @ 800V, 16AC Low Gate Charge

 9.10. Size:88K  apt
 apt45gp120b.pdf

APT45M100J APT45M100J

APT45GP120B1200VPOWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCswitchmode power supplies.E Low Conduction Loss 100 kHz operation @ 800V, 16AC Low Gate Charge

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