All MOSFET. APT48M80L Datasheet

 

APT48M80L Datasheet and Replacement


   Type Designator: APT48M80L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 49 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-264
 

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APT48M80L Datasheet (PDF)

 ..1. Size:198K  microsemi
 apt48m80b2 apt48m80l.pdf pdf_icon

APT48M80L

APT48M80B2 APT48M80L 800V, 49A, 0.19 MaxN-Channel MOSFET T-MaxPower MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. TO-264A proprietary planar strip design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacit

Datasheet: APT45M100J , APT47F60J , APT47M60J , APT47N60BC3G , APT47N60BCFG , APT47N60SC3G , APT47N65BC3G , APT48M80B2 , STP80NF70 , APT4F120K , APT4F120S , APT4M120K , APT5010B2FLLG , APT5010B2LLG , APT5010LFLLG , APT5010LLLG , APT5012JN .

History: IRFR024NTR | JMSH0403BG | SI2333DS-T1-GE3 | FDI036N10A | ALD1101BPAL | 2SK3692-01 | JMSH2010PCQ

Keywords - APT48M80L MOSFET datasheet

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