All MOSFET. RF1S9540SM Datasheet

 

RF1S9540SM MOSFET. Datasheet pdf. Equivalent


   Type Designator: RF1S9540SM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO263AB

 RF1S9540SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF1S9540SM Datasheet (PDF)

 ..1. Size:99K  fairchild semi
 irf9540 rf1s9540sm.pdf

RF1S9540SM RF1S9540SM

IRF9540, RF1S9540SMData Sheet January 200219A, 100V, 0.200 Ohm, P-Channel Power FeaturesMOSFETs 19A, 100VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 6.1. Size:414K  harris semi
 rf1s9540.pdf

RF1S9540SM RF1S9540SM

 8.1. Size:68K  intersil
 irf9530 rf1s9530sm.pdf

RF1S9540SM RF1S9540SM

IRF9530, RF1S9530SMData Sheet July 1999 File Number 2221.412A, 100V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 12A, 100VThese are P-Channel enhancement mode silicon gate rDS(ON) = 0.300power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the

 9.1. Size:103K  fairchild semi
 irf9630 rf1s9630sm.pdf

RF1S9540SM RF1S9540SM

IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a

 9.2. Size:103K  fairchild semi
 irf9640 rf1s9640sm.pdf

RF1S9540SM RF1S9540SM

IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 9.3. Size:406K  harris semi
 irf9630 irf9631 irf9632 irf9633 rf1s9630.pdf

RF1S9540SM RF1S9540SM

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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