RF1S9540SM Datasheet and Replacement
Type Designator: RF1S9540SM
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO263AB
RF1S9540SM substitution
RF1S9540SM Datasheet (PDF)
irf9540 rf1s9540sm.pdf
IRF9540, RF1S9540SMData Sheet January 200219A, 100V, 0.200 Ohm, P-Channel Power FeaturesMOSFETs 19A, 100VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
irf9530 rf1s9530sm.pdf
IRF9530, RF1S9530SMData Sheet July 1999 File Number 2221.412A, 100V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 12A, 100VThese are P-Channel enhancement mode silicon gate rDS(ON) = 0.300power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the
irf9630 rf1s9630sm.pdf
IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a
Datasheet: RF1S530SM , RF1S540SM , RF1S60P03SM , RF1S630SM , RF1S640SM , RF1S70N03SM , RF1S70N06SM , RF1S9530SM , AO3400A , RF1S9630SM , RF1S9640SM , RFB18N10CS , RFD10P03L , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 .
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