RF1S9540SM. Аналоги и основные параметры

Наименование производителя: RF1S9540SM

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 150 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 19 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm

Тип корпуса: TO263AB

Аналог (замена) для RF1S9540SM

- подборⓘ MOSFET транзистора по параметрам

 

RF1S9540SM даташит

 ..1. Size:99K  fairchild semi
 irf9540 rf1s9540sm.pdf pdf_icon

RF1S9540SM

IRF9540, RF1S9540SM Data Sheet January 2002 19A, 100V, 0.200 Ohm, P-Channel Power Features MOSFETs 19A, 100V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 6.1. Size:414K  harris semi
 rf1s9540.pdf pdf_icon

RF1S9540SM

 8.1. Size:68K  intersil
 irf9530 rf1s9530sm.pdf pdf_icon

RF1S9540SM

IRF9530, RF1S9530SM Data Sheet July 1999 File Number 2221.4 12A, 100V, 0.300 Ohm, P-Channel Power Features MOSFETs 12A, 100V These are P-Channel enhancement mode silicon gate rDS(ON) = 0.300 power field effect transistors. They are advanced power Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

 9.1. Size:103K  fairchild semi
 irf9630 rf1s9630sm.pdf pdf_icon

RF1S9540SM

IRF9630, RF1S9630SM Data Sheet January 2002 6.5A, 200V, 0.800 Ohm, P-Channel Power Features MOSFETs 6.5A, 200V These are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800 field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rated designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a

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