APT5018SFLLG
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT5018SFLLG
Type of Transistor: MOFETS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 300
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 58
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 546
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18
Ohm
Package:
D3PAK
APT5018SFLLG
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT5018SFLLG
Datasheet (PDF)
..1. Size:94K apt
apt5018bfllg apt5018sfllg.pdf 
APT5018BFLLAPT5018SFLL500V 27A 0.180BLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLal
6.1. Size:104K apt
apt5018sll.pdf
APT5018BLLAPT5018SLL500V 27A 0.180RBLL POWER MOS 7 MOSFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong
7.1. Size:63K apt
apt5018bfll.pdf
APT5018BFLLAPT5018SFLL500V 27A 0.180WTM BLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast
7.2. Size:61K apt
apt5018bll.pdf
APT5018BLLAPT5018SLL500V 27A 0.180WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching
7.3. Size:375K inchange semiconductor
apt5018bfll.pdf
isc N-Channel MOSFET Transistor APT5018BFLLFEATURESDrain Current I =27A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.18(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
7.4. Size:375K inchange semiconductor
apt5018bll.pdf
isc N-Channel MOSFET Transistor APT5018BLLFEATURESDrain Current I =27A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.18(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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