APT5030BN MOFETS Datasheet: N-Ch, 500V, 21A. Full specification with pinout and replacement list

APT5030BN Specs and Replacement

Type Designator: APT5030BN

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 522 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-247

APT5030BN substitution

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APT5030BN datasheet

..1. Size:36K apt
apt5030bn.pdf pdf_icon

D TO-247 G APT5025BN 500V 23.0A 0.25 S APT5030BN 500V 21.0A 0.30 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 5025BN 5030BN UNIT VDSS Drain-Source Voltage 500 500 Volts ID Continuous Drain Current @ TC = 25 C 23 21 Amps IDM Pulsed Drain Current 1 92 84 V... See More ⇒

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APT5030AVR 500V 14.7A 0.300 POWER MOS V TO-3 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower... See More ⇒

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