APT5030BN MOSFET. Datasheet pdf. Equivalent

   Type Designator: APT5030BN
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 83 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 522 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-247

APT5030BN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS