APT5030BN - параметры транзистора MOSFET, его аналоги, datasheet

APT5030BN Datasheet (PDF)

..1. Size:36K apt
apt5030bn.pdf pdf_icon

DTO-247GAPT5025BN 500V 23.0A 0.25SAPT5030BN 500V 21.0A 0.30POWER MOS IVN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APT APTSymbol Parameter 5025BN 5030BN UNITVDSS Drain-Source Voltage500 500 VoltsID Continuous Drain Current @ TC = 25C23 21AmpsIDM Pulsed Drain Current 192 84V

7.1. Size:375K apt
apt4530an apt5025an apt5030an.pdf pdf_icon

7.2. Size:61K apt
apt5030avr.pdf pdf_icon

APT5030AVR500V 14.7A 0.300POWER MOS VTO-3Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

8.1. Size:61K apt
apt5032cvr.pdf pdf_icon

APT5032CVR500V 14A 0.320POWER MOS VTO-254TO-254Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested

Другие MOSFET... APT5024BLL , APT5024BLLG , APT5024SFLL , APT5024SFLLG , APT5024SLL , APT5024SVFRG , APT5025AN , APT5030AN , HY1906P , APT5040KFLLG , APT50M50JLL , APT50M50L2FLLG , APT50M50L2LLG , APT50M60JVFR , APT50M60JVR , APT50M60L2VFRG , APT50M60L2VRG .