All MOSFET. APT50M60JVFR Datasheet

 

APT50M60JVFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT50M60JVFR
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 568 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 63 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 560 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 1800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-227

 APT50M60JVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT50M60JVFR Datasheet (PDF)

 ..1. Size:165K  apt
 apt50m60jvfr.pdf

APT50M60JVFR APT50M60JVFR

APT50M60JVFR500V 63A 0.060 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Popula

 4.1. Size:147K  apt
 apt50m60jvr.pdf

APT50M60JVFR APT50M60JVFR

APT50M60JVR500V 63A 0.060 POWER MOS V MOSFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Popular

 5.1. Size:60K  apt
 apt50m60jn.pdf

APT50M60JVFR APT50M60JVFR

DGAPT50M60JN 500V 71A 0.06OS"UL Recognized" File No. E145592 (S)ISOTOPPOWER MOS IVSINGLE DIE ISOTOP PACKAGEN- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.APTSymbol Parameter 50M60JN UNITVDSS Drain-Source Voltage500 VoltsID Continuous Drain Current @ TC = 25C71AmpsIDM, lLM Pulse

 6.1. Size:167K  apt
 apt50m60l2vrg.pdf

APT50M60JVFR APT50M60JVFR

APT50M60L2VR500V 77A 0.060 POWER MOS V MOSFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package

 6.2. Size:79K  apt
 apt50m60l2vfr.pdf

APT50M60JVFR APT50M60JVFR

APT50M60L2VFR500V 77A 0.060WPOWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Faster Switching D

 6.3. Size:158K  apt
 apt50m60l2vfrg.pdf

APT50M60JVFR APT50M60JVFR

APT50M60L2VFR500V 77A 0.060 POWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D TO-264 MAX Packa

 6.4. Size:33K  apt
 apt50m60l2vr.pdf

APT50M60JVFR APT50M60JVFR

APT50M60L2VR500V 77A 0.060WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD

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