APT50M60JVR Datasheet. Specs and Replacement

Type Designator: APT50M60JVR  📄📄 

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 568 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 63 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 1800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOT-227

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APT50M60JVR datasheet

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APT50M60JVR

APT50M60JVR 500V 63A 0.060 POWER MOS V MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Popular ... See More ⇒

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APT50M60JVR

APT50M60JVFR 500V 63A 0.060 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Popula... See More ⇒

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APT50M60JVR

D G APT50M60JN 500V 71A 0.06O S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 50M60JN UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25 C 71 Amps IDM, lLM Pulse... See More ⇒

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APT50M60JVR

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Detailed specifications: APT5025AN, APT5030AN, APT5030BN, APT5040KFLLG, APT50M50JLL, APT50M50L2FLLG, APT50M50L2LLG, APT50M60JVFR, IRF3205, APT50M60L2VFRG, APT50M60L2VRG, APT50M65B2LLG, APT50M65LFLL, APT50M65LLLG, APT50M75B2FLLG, APT50M75B2LLG, APT50M75LFLLG

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