APT50M60L2VFRG Specs and Replacement
Type Designator: APT50M60L2VFRG
Type of Transistor: MOFETS
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 833 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 77 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 560 nC
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 1800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO-264MAX
APT50M60L2VFRG substitution
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APT50M60L2VFRG datasheet
apt50m60l2vfrg.pdf
APT50M60L2VFR 500V 77A 0.060 POWER MOS V FREDFET TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D TO-264 MAX Packa... See More ⇒
apt50m60l2vfr.pdf
APT50M60L2VFR 500V 77A 0.060W POWER MOS V FREDFET TO-264 Max Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Faster Switching D ... See More ⇒
Detailed specifications: APT5030AN, APT5030BN, APT5040KFLLG, APT50M50JLL, APT50M50L2FLLG, APT50M50L2LLG, APT50M60JVFR, APT50M60JVR, IRF3205, APT50M60L2VRG, APT50M65B2LLG, APT50M65LFLL, APT50M65LLLG, APT50M75B2FLLG, APT50M75B2LLG, APT50M75LFLLG, APT50M75LLLG
Keywords - APT50M60L2VFRG MOSFET specs
APT50M60L2VFRG cross reference
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APT50M60L2VFRG substitution
APT50M60L2VFRG replacement
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History: APT50M60L2VRG | DMP4047SSD
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