APT50M60L2VFRG - Даташиты. Аналоги. Основные параметры
Наименование производителя: APT50M60L2VFRG
Тип транзистора: MOFETS
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 833 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 77 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 1800 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
Тип корпуса: TO-264MAX
Аналог (замена) для APT50M60L2VFRG
APT50M60L2VFRG Datasheet (PDF)
apt50m60l2vfrg.pdf

APT50M60L2VFR500V 77A 0.060 POWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D TO-264 MAX Packa
apt50m60l2vfr.pdf

APT50M60L2VFR500V 77A 0.060WPOWER MOS V FREDFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package Faster Switching D
apt50m60l2vrg.pdf

APT50M60L2VR500V 77A 0.060 POWER MOS V MOSFETTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package
apt50m60l2vr.pdf

APT50M60L2VR500V 77A 0.060WPOWER MOS VTO-264MaxPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. TO-264 MAX Package 100% Avalanche TestedD
Другие MOSFET... APT5030AN , APT5030BN , APT5040KFLLG , APT50M50JLL , APT50M50L2FLLG , APT50M50L2LLG , APT50M60JVFR , APT50M60JVR , IRF3205 , APT50M60L2VRG , APT50M65B2LLG , APT50M65LFLL , APT50M65LLLG , APT50M75B2FLLG , APT50M75B2LLG , APT50M75LFLLG , APT50M75LLLG .
History: IPU80R2K0P7 | SWP046R08E9T | AFP1073 | STB22NS25Z | MPSA80M670B | S60N15R | SIHF9510
History: IPU80R2K0P7 | SWP046R08E9T | AFP1073 | STB22NS25Z | MPSA80M670B | S60N15R | SIHF9510



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