APT50M65LFLL
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT50M65LFLL
Type of Transistor: MOFETS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 694
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 67
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 141
nC
trⓘ - Rise Time: 28
nS
Cossⓘ -
Output Capacitance: 1390
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065
Ohm
Package:
TO-264
APT50M65LFLL
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT50M65LFLL
Datasheet (PDF)
..1. Size:99K apt
apt50m65lfll.pdf 
APT50M65B2FLLAPT50M65LFLL500V 67A 0.065RB2FLL POWER MOS 7 FREDFETT-MaxTMPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesL
..2. Size:255K inchange semiconductor
apt50m65lfll.pdf
isc N-Channel MOSFET Transistor APT50M65LFLLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
5.1. Size:98K apt
apt50m65b2llg apt50m65lllg.pdf
APT50M65B2LLAPT50M65LLL500V 67A 0.065RB2LL POWER MOS 7 MOSFETT-MaxTMPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL
6.1. Size:60K apt
apt50m65jll.pdf
APT50M65JLL500V 60A 0.065 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
6.2. Size:63K apt
apt50m65.pdf
APT50M65B2FLLAPT50M65LFLL500V 67A 0.065WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptio
6.3. Size:63K apt
apt50m65b2fll.pdf
APT50M65B2FLLAPT50M65LFLL500V 67A 0.065WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptio
6.4. Size:63K apt
apt50m65jfll.pdf
APT50M65JFLL500V 60A 0.065WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit
6.5. Size:68K apt
apt50m65b2ll.pdf
APT50M65B2LLAPT50M65LLL500V 67A 0.065WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s
6.6. Size:376K inchange semiconductor
apt50m65b2fll.pdf
isc N-Channel MOSFET Transistor APT50M65B2FLLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
6.7. Size:376K inchange semiconductor
apt50m65b2ll.pdf
isc N-Channel MOSFET Transistor APT50M65B2LLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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