APT50M65LFLL
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT50M65LFLL
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 694
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 67
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 141
nC
trⓘ -
Время нарастания: 28
ns
Cossⓘ - Выходная емкость: 1390
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065
Ohm
Тип корпуса:
TO-264
Аналог (замена) для APT50M65LFLL
APT50M65LFLL
Datasheet (PDF)
..1. Size:99K apt
apt50m65lfll.pdf 
APT50M65B2FLLAPT50M65LFLL500V 67A 0.065RB2FLL POWER MOS 7 FREDFETT-MaxTMPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesL
..2. Size:255K inchange semiconductor
apt50m65lfll.pdf 
isc N-Channel MOSFET Transistor APT50M65LFLLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
5.1. Size:98K apt
apt50m65b2llg apt50m65lllg.pdf 
APT50M65B2LLAPT50M65LLL500V 67A 0.065RB2LL POWER MOS 7 MOSFETT-MaxTMPower MOS 7 is a new generation of low loss, high voltage, N-Channel TO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL
6.1. Size:60K apt
apt50m65jll.pdf 
APT50M65JLL500V 60A 0.065 WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
6.2. Size:63K apt
apt50m65.pdf 
APT50M65B2FLLAPT50M65LFLL500V 67A 0.065WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptio
6.3. Size:63K apt
apt50m65b2fll.pdf 
APT50M65B2FLLAPT50M65LFLL500V 67A 0.065WTMFREDFET POWER MOS 7B2FLLPower MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchingT-MAXTO-264losses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptio
6.4. Size:63K apt
apt50m65jfll.pdf 
APT50M65JFLL500V 60A 0.065WTMFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent wit
6.5. Size:68K apt
apt50m65b2ll.pdf 
APT50M65B2LLAPT50M65LLL500V 67A 0.065WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s
6.6. Size:376K inchange semiconductor
apt50m65b2fll.pdf 
isc N-Channel MOSFET Transistor APT50M65B2FLLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
6.7. Size:376K inchange semiconductor
apt50m65b2ll.pdf 
isc N-Channel MOSFET Transistor APT50M65B2LLFEATURESDrain Current I = 67A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.065(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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