APT50M85LVR Datasheet. Specs and Replacement

Type Designator: APT50M85LVR  📄📄 

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO-264

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APT50M85LVR datasheet

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APT50M85LVR

APT50M85B2VR APT50M85LVR 500V 56A 0.085W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificatio... See More ⇒

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APT50M85LVR

APT50M85B2VFR APT50M85LVFR 500V 56A 0.085 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout... See More ⇒

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APT50M85LVR

APT50M85JVR 500V 50A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche ... See More ⇒

 6.2. Size:76K  apt
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APT50M85LVR

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Detailed specifications: APT50M75LFLLG, APT50M75LLLG, APT50M80B2VFRG, APT50M80B2VRG, APT50M80LVFRG, APT50M80LVRG, APT50M85B2VFRG, APT50M85LVFRG, IRF640N, APT50N60JCCU2, APT51F50J, APT51M50J, APT53F80J, APT53N60BC6, APT53N60SC6, APT5570AN, APT56F50B2

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