APT51F50J Specs and Replacement
Type Designator: APT51F50J
Type of Transistor: MOFETS
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 480 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 1250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOT-227
APT51F50J substitution
APT51F50J datasheet
apt51f50j.pdf
APT51F50J 500V, 51A, 0.075 Max, trr 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig... See More ⇒
apt51m50j.pdf
APT51M50J 500V, 51A, 0.075 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon g... See More ⇒
Detailed specifications: APT50M80B2VFRG , APT50M80B2VRG , APT50M80LVFRG , APT50M80LVRG , APT50M85B2VFRG , APT50M85LVFRG , APT50M85LVR , APT50N60JCCU2 , IRF3710 , APT51M50J , APT53F80J , APT53N60BC6 , APT53N60SC6 , APT5570AN , APT56F50B2 , APT56F50L , APT56F60B2 .
History: FDC3612
Keywords - APT51F50J MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: FDC3612
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