All MOSFET. APT51F50J Datasheet

 

APT51F50J MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT51F50J
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 480 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 51 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 290 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 1250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT-227

 APT51F50J Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT51F50J Datasheet (PDF)

 ..1. Size:214K  microsemi
 apt51f50j.pdf

APT51F50J APT51F50J

APT51F50J 500V, 51A, 0.075 Max, trr 310nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig

 9.1. Size:214K  microsemi
 apt51m50j.pdf

APT51F50J APT51F50J

APT51M50J 500V, 51A, 0.075 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon g

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXFT94N30T

 

 
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