APT56F60B2
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT56F60B2
Type of Transistor: MOFETS
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1040
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 60
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 280
nC
trⓘ - Rise Time: 75
nS
Cossⓘ -
Output Capacitance: 1040
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11
Ohm
Package:
TO-247
APT56F60B2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT56F60B2
Datasheet (PDF)
..1. Size:124K microsemi
apt56f60b2 apt56f60l.pdf 
APT56F60B2 APT56F60L 600V, 60A, 0.11 Max, trr 290nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
..2. Size:375K inchange semiconductor
apt56f60b2.pdf
isc N-Channel MOSFET Transistor APT56F60B2FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.11(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
6.1. Size:255K inchange semiconductor
apt56f60l.pdf
isc N-Channel MOSFET Transistor APT56F60LFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.11(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.1. Size:212K microsemi
apt56f50b2 apt56f50l.pdf
APT56F50B2 APT56F50L 500V, 56A, 0.10 Max, trr 280nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
8.2. Size:375K inchange semiconductor
apt56f50b2.pdf
isc N-Channel MOSFET Transistor APT56F50B2FEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.3. Size:255K inchange semiconductor
apt56f50l.pdf
isc N-Channel MOSFET Transistor APT56F50LFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Datasheet: FQT7N10L
, FDP083N15A
, FQU10N20C
, FDP075N15A
, FQU11P06
, FQU12N20
, FDPF085N10A
, FQU13N06L
, IRFZ44
, FDB86102LZ
, FQU17P06
, FQU1N60C
, FDP085N10A
, FQU20N06L
, FQU2N100
, FQU2N60C
, FDMC8030
.
