APT56F60B2 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT56F60B2
Тип транзистора: MOFETS
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1040 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 75 ns
Cossⓘ - Выходная емкость: 1040 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: TO-247
- подбор MOSFET транзистора по параметрам
APT56F60B2 Datasheet (PDF)
apt56f60b2 apt56f60l.pdf

APT56F60B2 APT56F60L 600V, 60A, 0.11 Max, trr 290nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
apt56f60b2.pdf

isc N-Channel MOSFET Transistor APT56F60B2FEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.11(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt56f60l.pdf

isc N-Channel MOSFET Transistor APT56F60LFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.11(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
apt56f50b2 apt56f50l.pdf

APT56F50B2 APT56F50L 500V, 56A, 0.10 Max, trr 280nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: ZVN4424C | SW4N65D | IPB240N03S4L-R8 | MDHT4N25URH | IRF3707SPBF | FQA10N80C | SI1467DH
History: ZVN4424C | SW4N65D | IPB240N03S4L-R8 | MDHT4N25URH | IRF3707SPBF | FQA10N80C | SI1467DH



Список транзисторов
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