APT56F60B2. Аналоги и основные параметры
Наименование производителя: APT56F60B2
Тип транзистора: MOFETS
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 1040 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 75 ns
Cossⓘ - Выходная емкость: 1040 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT56F60B2
- подборⓘ MOSFET транзистора по параметрам
APT56F60B2 даташит
apt56f60b2 apt56f60l.pdf
APT56F60B2 APT56F60L 600V, 60A, 0.11 Max, trr 290ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
apt56f60b2.pdf
isc N-Channel MOSFET Transistor APT56F60B2 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.11 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt56f60l.pdf
isc N-Channel MOSFET Transistor APT56F60L FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.11 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo
apt56f50b2 apt56f50l.pdf
APT56F50B2 APT56F50L 500V, 56A, 0.10 Max, trr 280ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap
Другие MOSFET... APT51F50J , APT51M50J , APT53F80J , APT53N60BC6 , APT53N60SC6 , APT5570AN , APT56F50B2 , APT56F50L , IRFP250N , APT56F60L , APT56M50B2 , APT56M50L , APT56M60B2 , APT56M60L , APT58F50J , APT58M50J , APT58M50JCU2 .
History: NTD4854N-1G | APT56F60L
History: NTD4854N-1G | APT56F60L
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Список транзисторов
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