APT6011LVFRG Datasheet. Specs and Replacement

Type Designator: APT6011LVFRG  📄📄 

Type of Transistor: MOFETS

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 49 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO-264

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APT6011LVFRG datasheet

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APT6011LVFRG

APT6011B2VFR APT6011LVFR 600V 49A 0.110 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

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APT6011LVFRG

APT6011LVFR 600V 49A 0.110W POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Teste... See More ⇒

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 apt6011lvr.pdf pdf_icon

APT6011LVFRG

APT6011B2VR APT6011LVR 600V 49A 0.110W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specifications... See More ⇒

 7.1. Size:143K  apt
 apt6011b2vr.pdf pdf_icon

APT6011LVFRG

APT6011B2VR APT6011LVR 600V 49A 0.110 B2VR POWER MOS V MOSFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR... See More ⇒

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Detailed specifications: APT58M50JCU3, APT58M80J, APT5F100K, APT6010B2FLLG, APT6010B2LLG, APT6010LFLLG, APT6010LLLG, APT6011B2VFRG, SPP20N60C3, APT6013B2FLLG, APT6013B2LLG, APT6013LFLLG, APT6013LLLG, APT6015B2VFRG, APT6015JVFR, APT6015LVFRG, APT6017B2FLLG

Keywords - APT6011LVFRG MOSFET specs

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