All MOSFET. APT6025SVFRG Datasheet

 

APT6025SVFRG Datasheet and Replacement


   Type Designator: APT6025SVFRG
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 370 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 525 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: D3PAK
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APT6025SVFRG Datasheet (PDF)

 ..1. Size:116K  apt
 apt6025bvfrg apt6025svfrg.pdf pdf_icon

APT6025SVFRG

APT6025BVFRAPT6025SVFR600V 25A 0.250POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Re

 3.1. Size:113K  apt
 apt6025svfr.pdf pdf_icon

APT6025SVFRG

APT6025BVFRAPT6025SVFR600V 25A 0.250POWER MOS V FREDFETD3PAKTO-247Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Re

 5.1. Size:59K  apt
 apt6025svr.pdf pdf_icon

APT6025SVFRG

APT6025SVR600V 25A 0.250WPOWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower Le

 6.1. Size:162K  apt
 apt6025bfllg apt6025sfllg.pdf pdf_icon

APT6025SVFRG

APT6025BFLLAPT6025SFLL600V 24A 0.250BFLLR POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSFLL

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History: VS3640BC | DMNH10H028SCT | IRLS4030 | AM8820 | HUF76423D3 | IXFR12N100Q | WML11N80M3

Keywords - APT6025SVFRG MOSFET datasheet

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