All MOSFET. APT6038BLLG Datasheet

 

APT6038BLLG Datasheet and Replacement


   Type Designator: APT6038BLLG
   Type of Transistor: MOFETS
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 265 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 365 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-247
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APT6038BLLG Datasheet (PDF)

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apt6038bllg apt6038sllg.pdf pdf_icon

APT6038BLLG

APT6038BLLAPT6038SLL600V 17A 0.380RBLL POWER MOS 7 MOSFETD3PAKTO-247Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesSLLalong

 4.1. Size:69K  apt
apt6038bll.pdf pdf_icon

APT6038BLLG

APT6038BLLAPT6038SLL600V 17A 0.380WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching

 4.2. Size:376K  inchange semiconductor
apt6038bll.pdf pdf_icon

APT6038BLLG

isc N-Channel MOSFET Transistor APT6038BLLFEATURESDrain Current I =17A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 6.1. Size:71K  apt
apt6038bfll.pdf pdf_icon

APT6038BLLG

APT6038BFLLAPT6038SFLL600V 17A 0.380WTM BFLLFREDFET POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fas

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ECX10N20 | AP9926GEO | RW1C020UN | IRF441 | STD4N62K3 | 2N65L | GSM3050S

Keywords - APT6038BLLG MOSFET datasheet

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