RFD14N05LSM Datasheet and Replacement
Type Designator: RFD14N05LSM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 185 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO252AA
- MOSFET Cross-Reference Search
RFD14N05LSM Datasheet (PDF)
rfd14n05l rfd14n05lsm rfp14n05l.pdf

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili
rfd14n05l rfd14n05lsm.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
rfd14n05lsm.pdf

RFD14N05LSMwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Mo
rfd14n05sm9a.pdf

RFD14N05, RFD14N05SMData Sheet February 200414A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti
Datasheet: RF1S9640SM , RFB18N10CS , RFD10P03L , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 , RFD14N05L , HY1906P , RFD14N05SM , RFD14N06L , RFD14N06LSM , RFD15N06LE , RFD15N06LESM , RFD15P05 , RFD15P06 , RFD15P06SM .
History: HCS90R1K0S | 2SK4096LS | UT8205A | IXTH6N100D2 | BUK7K23-80E | BUK7Y22-100E | WML11N80M3
Keywords - RFD14N05LSM MOSFET datasheet
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History: HCS90R1K0S | 2SK4096LS | UT8205A | IXTH6N100D2 | BUK7K23-80E | BUK7Y22-100E | WML11N80M3



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