RFD14N05LSM. Аналоги и основные параметры

Наименование производителя: RFD14N05LSM

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 48 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 50 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 24 ns

Cossⓘ - Выходная емкость: 185 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm

Тип корпуса: TO252AA

Аналог (замена) для RFD14N05LSM

- подборⓘ MOSFET транзистора по параметрам

 

RFD14N05LSM даташит

 ..1. Size:207K  fairchild semi
rfd14n05l rfd14n05lsm rfp14n05l.pdfpdf_icon

RFD14N05LSM

RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utili

 ..2. Size:1039K  onsemi
rfd14n05l rfd14n05lsm.pdfpdf_icon

RFD14N05LSM

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:889K  cn vbsemi
rfd14n05lsm.pdfpdf_icon

RFD14N05LSM

RFD14N05LSM www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Mo

 6.1. Size:219K  fairchild semi
rfd14n05sm9a.pdfpdf_icon

RFD14N05LSM

RFD14N05, RFD14N05SM Data Sheet February 2004 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti

Другие IGBT... RF1S9640SM, RFB18N10CS, RFD10P03L, RFD10P03LSM, RFD12N06RLE, RFD12N06RLESM, RFD14N05, RFD14N05L, IRFB7545, RFD14N05SM, RFD14N06L, RFD14N06LSM, RFD15N06LE, RFD15N06LESM, RFD15P05, RFD15P06, RFD15P06SM