RFD14N06L Specs and Replacement
Type Designator: RFD14N06L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 185 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO251AA
RFD14N06L substitution
- MOSFET ⓘ Cross-Reference Search
RFD14N06L datasheet
rfd14n06l-sm rfp14n06l.pdf
RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 File Number 4088.3 14A, 60V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs 14A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives o... See More ⇒
rfd14n05l rfd14n05lsm rfp14n05l.pdf
RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utili... See More ⇒
rfd14n05sm9a.pdf
RFD14N05, RFD14N05SM Data Sheet February 2004 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti... See More ⇒
rfd14n05-sm rfp14n05.pdf
RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon... See More ⇒
Detailed specifications: RFD10P03L, RFD10P03LSM, RFD12N06RLE, RFD12N06RLESM, RFD14N05, RFD14N05L, RFD14N05LSM, RFD14N05SM, K2611, RFD14N06LSM, RFD15N06LE, RFD15N06LESM, RFD15P05, RFD15P06, RFD15P06SM, RFD16N03L, RFD16N03LSM
Keywords - RFD14N06L MOSFET specs
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