Справочник MOSFET. RFD14N06L

 

RFD14N06L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: RFD14N06L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 24 ns
   Cossⓘ - Выходная емкость: 185 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: TO251AA
 

 Аналог (замена) для RFD14N06L

   - подбор ⓘ MOSFET транзистора по параметрам

 

RFD14N06L Datasheet (PDF)

 0.1. Size:83K  intersil
rfd14n06l-sm rfp14n06l.pdfpdf_icon

RFD14N06L

RFD14N06L, RFD14N06LSM, RFP14N06LData Sheet July 1999 File Number 4088.314A, 60V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, giveso

 7.1. Size:207K  fairchild semi
rfd14n05l rfd14n05lsm rfp14n05l.pdfpdf_icon

RFD14N06L

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili

 7.2. Size:219K  fairchild semi
rfd14n05sm9a.pdfpdf_icon

RFD14N06L

RFD14N05, RFD14N05SMData Sheet February 200414A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti

 7.3. Size:381K  fairchild semi
rfd14n05-sm rfp14n05.pdfpdf_icon

RFD14N06L

RFD14N05, RFD14N05SM, RFP14N05Data Sheet January 200214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon

Другие MOSFET... RFD10P03L , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 , RFD14N05L , RFD14N05LSM , RFD14N05SM , IRF9640 , RFD14N06LSM , RFD15N06LE , RFD15N06LESM , RFD15P05 , RFD15P06 , RFD15P06SM , RFD16N03L , RFD16N03LSM .

History: IPI100N12S3-05 | TPC6011 | WST2315 | KTK5131E | NDS9953A | IRF7207PBF | SSW60R190S2

 

 
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