RFD14N06L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: RFD14N06L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 24 ns
Cossⓘ - Выходная емкость: 185 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
Тип корпуса: TO251AA
- подбор MOSFET транзистора по параметрам
RFD14N06L Datasheet (PDF)
rfd14n06l-sm rfp14n06l.pdf

RFD14N06L, RFD14N06LSM, RFP14N06LData Sheet July 1999 File Number 4088.314A, 60V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, giveso
rfd14n05l rfd14n05lsm rfp14n05l.pdf

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili
rfd14n05sm9a.pdf

RFD14N05, RFD14N05SMData Sheet February 200414A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulti
rfd14n05-sm rfp14n05.pdf

RFD14N05, RFD14N05SM, RFP14N05Data Sheet January 200214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SSF2312 | PHD6N10E | HUFA75339G3 | FQI15P12TU | WMB115N15HG4 | MTDK3S6R | SSM3K15AMFV
History: SSF2312 | PHD6N10E | HUFA75339G3 | FQI15P12TU | WMB115N15HG4 | MTDK3S6R | SSM3K15AMFV



Список транзисторов
Обновления
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2n2614 | 2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet | 2sc458 datasheet | irfz48 | bf494 transistor equivalent