APT77N60SC6 MOSFET. Datasheet pdf. Equivalent
Type Designator: APT77N60SC6
Type of Transistor: MOFETS
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 481 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
|Id|ⓘ - Maximum Drain Current: 77 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 260 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 4400 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: D3PAK
APT77N60SC6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT77N60SC6 Datasheet (PDF)
apt77n60bc6 apt77n60sc6.pdf
APT77N60BC6 APT77N60SC6 600V 77A 0.041 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedD Popular TO-247 or Surface Mount D3 package.GSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parame
apt77n60jc3.pdf
APT77N60JC3600V 77A 0.035Super Junction MOSFETCOOLMOSPower Semiconductors Ultra low RDS(ON)"UL Recognized" Low Miller CapacitanceISOTOP Ultra Low Gate Charge, QgD Avalanche Energy Rated N-Channel Enhancement Mode G Popular SOT-227 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter
apt77n60bc6.pdf
isc N-Channel MOSFET Transistor APT77N60BC6FEATURESDrain Current I =77A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.041(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: TK30A06J3
History: TK30A06J3
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