APT84M50L Datasheet. Specs and Replacement

Type Designator: APT84M50L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 84 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 1455 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO-264

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APT84M50L datasheet

 ..1. Size:211K  microsemi
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APT84M50L

APT84M50B2 APT84M50L 500V, 84A, 0.065 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and ca... See More ⇒

 ..2. Size:256K  inchange semiconductor
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APT84M50L

isc N-Channel MOSFET Transistor APT84M50L FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 6.1. Size:376K  inchange semiconductor
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APT84M50L

isc N-Channel MOSFET Transistor APT84M50B2 FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.065 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 9.1. Size:212K  microsemi
 apt84f50b2 apt84f50l.pdf pdf_icon

APT84M50L

APT84F50B2 APT84F50L 500V, 84A, 0.065 Max, trr 320ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate res... See More ⇒

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Detailed specifications: APT8075BVFRG, APT8090AN, APT8090BN, APT80F60J, APT80M60J, APT84F50B2, APT84F50L, APT84M50B2, IRFP260, APT8M100B, APT8M100S, APT8M80K, APT901R1AN, APT901R1BN, APT901R1HN, APT901R3AN, APT901R3BN

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