APT8M80K Datasheet. Specs and Replacement

Type Designator: APT8M80K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO-220

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APT8M80K datasheet

 ..1. Size:117K  microsemi
 apt8m80k.pdf pdf_icon

APT8M80K

APT8M80K 800V, 8A, 1.35 MAX, N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga... See More ⇒

 9.1. Size:212K  microsemi
 apt8m100b apt8m100s.pdf pdf_icon

APT8M80K

APT8M100B APT8M100S 1000V, 8A, 1.80 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of ... See More ⇒

Detailed specifications: APT80F60J, APT80M60J, APT84F50B2, APT84F50L, APT84M50B2, APT84M50L, APT8M100B, APT8M100S, SPP20N60C3, APT901R1AN, APT901R1BN, APT901R1HN, APT901R3AN, APT901R3BN, APT901R3HN, APT901RBN, APT902R4BN

Keywords - APT8M80K MOSFET specs

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