All MOSFET. APTC60AM18SCG Datasheet

 

APTC60AM18SCG MOSFET. Datasheet pdf. Equivalent


   Type Designator: APTC60AM18SCG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 833 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 143 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1036 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 10200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: MODULE

 APTC60AM18SCG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APTC60AM18SCG Datasheet (PDF)

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