EMB20P03V PDF and Equivalents Search

 

EMB20P03V Specs and Replacement

Type Designator: EMB20P03V

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 208 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: EDFN3X3

EMB20P03V substitution

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EMB20P03V datasheet

 ..1. Size:191K  china
 emb20p03v.pdf pdf_icon

EMB20P03V

EMB20P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 18A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒

 ..2. Size:191K  emc
 emb20p03v.pdf pdf_icon

EMB20P03V

EMB20P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 18A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒

 6.1. Size:181K  emc
 emb20p03g.pdf pdf_icon

EMB20P03V

EMB20P03G P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 10A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS ... See More ⇒

 9.1. Size:204K  1
 emb20n03v.pdf pdf_icon

EMB20P03V

EMB20N03V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 20m ID 12A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20... See More ⇒

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Detailed specifications: 2SK2255-01MR, 7N10L-AA3, 7N10G-AA3, 7N10L-TN3, 7N10G-TN3, AO4466L, AOD4144, CS60N06C4, IRFP460, FTW20N50A, HY1506P, HY1506I, HY1506B, JCS18N50WH, ME04N25, ME04N25G, SiS412DN

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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