HY1506P MOSFET Datasheet: N-Ch, 60V, 55A. Full specification with pinout and replacement list

HY1506P Specs and Replacement

Type Designator: HY1506P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 666 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: TO220FB

HY1506P substitution

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HY1506P datasheet

8.1. Size:424K 1
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HY1506C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/48A D D D D D D D D RDS(ON)= 10.5m (typ.)@VGS = 10V RDS(ON)= 12.2m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application ... See More ⇒

8.2. Size:424K hymexa
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8.3. Size:580K hymexa
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HY1506P/I/B Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 55 A Mounted on Large Heat Sink IDM TC=25 C 220** A Pulsed Drain C... See More ⇒

Detailed specifications: 7N10G-AA3, 7N10L-TN3, 7N10G-TN3, AO4466L, AOD4144, CS60N06C4, EMB20P03V, FTW20N50A, IRF640, HY1506I, HY1506B, JCS18N50WH, ME04N25, ME04N25G, SiS412DN, RCD040N25TL, RCD041N25