JCS18N50WH MOSFET Datasheet: N-Ch, 500V, 19A. Full specification with pinout and replacement list

JCS18N50WH Specs and Replacement

Type Designator: JCS18N50WH

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 169 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm

Package: TO247

JCS18N50WH substitution

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JCS18N50WH datasheet

..1. Size:948K jilin sino
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... See More ⇒

5.1. Size:1269K jilin sino
jcs18n50we jcs18n50abe.pdf pdf_icon

N N- CHANNEL MOSFET R JCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒

6.1. Size:1873K jilin sino
jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf pdf_icon

N N- CHANNEL MOSFET R JCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC Eoss @Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS ... See More ⇒

8.1. Size:721K jilin sino
jcs18n25vc jcs18n25rc jcs18n25cc jcs18n25fc.pdf pdf_icon

N-CHANNEL MOSFET JCS18N25C Package MAIN CHARACTERISTICS ID 18A VDSS 250V Rdson-max@Vgs=10V 230m Qg-typ 17.48nC APPLICATIONS High efficiency switch mode power supplies UPS Electronic lamp ballasts based on half bridge UPS ... See More ⇒

Detailed specifications: AO4466L, AOD4144, CS60N06C4, EMB20P03V, FTW20N50A, HY1506P, HY1506I, HY1506B, IRFB4110, ME04N25, ME04N25G, SiS412DN, RCD040N25TL, RCD041N25, RCD051N20, RCD075N19, RCD080N25TL