ME04N25 PDF and Equivalents Search

 

ME04N25 Specs and Replacement

Type Designator: ME04N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO252

ME04N25 substitution

- MOSFET ⓘ Cross-Reference Search

 

ME04N25 datasheet

 ..1. Size:480K  matsuki electric
 me04n25.pdf pdf_icon

ME04N25

... See More ⇒

 ..2. Size:574K  matsuki electric
 me04n25 me04n25-g.pdf pdf_icon

ME04N25

... See More ⇒

Detailed specifications: AOD4144, CS60N06C4, EMB20P03V, FTW20N50A, HY1506P, HY1506I, HY1506B, JCS18N50WH, IRF640N, ME04N25G, SiS412DN, RCD040N25TL, RCD041N25, RCD051N20, RCD075N19, RCD080N25TL, RCD100N19

Keywords - ME04N25 MOSFET specs

 ME04N25 cross reference

 ME04N25 equivalent finder

 ME04N25 pdf lookup

 ME04N25 substitution

 ME04N25 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.