All MOSFET. ME04N25 Datasheet

 

ME04N25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME04N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: TO252

 ME04N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME04N25 Datasheet (PDF)

 ..1. Size:480K  matsuki electric
 me04n25.pdf

ME04N25 ME04N25

ME04N25/ME04N25-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)1.8@VGS=10V The ME04N25 is the N-Channel logic enhancement mode power RDS(ON)2.0@VGS=5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

 ..2. Size:574K  matsuki electric
 me04n25 me04n25-g.pdf

ME04N25 ME04N25

ME04N25/ME04N25-G N-Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)1.8@VGS=10V The ME04N25 is the N-Channel logic enhancement mode power RDS(ON)2.0@VGS=5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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