RCD041N25 Specs and Replacement
Type Designator: RCD041N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: SC-63
RCD041N25 substitution
- MOSFET ⓘ Cross-Reference Search
RCD041N25 datasheet
rcd041n25.pdf
RCD041N25 Nch 250V 4.0A Power MOSFET Data Sheet lOutline VDSS 250V CPT3 (SC-63) RDS(on) (Max.) 1300mW (3) ID 4.0A (2) (1) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% ... See More ⇒
rcd040n25tl.pdf
Data Sheet 10V Drive Nch MOSFET RCD040N25 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. 2.3 0.5 1.0 5) Parallel use is easy. Application Switching Packaging spe... See More ⇒
rcd040n25.pdf
Data Sheet 10V Drive Nch MOSFET RCD040N25 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. 2.3 0.5 1.0 5) Parallel use is easy. Application Switching Packaging spe... See More ⇒
Detailed specifications: HY1506P, HY1506I, HY1506B, JCS18N50WH, ME04N25, ME04N25G, SiS412DN, RCD040N25TL, IRF3710, RCD051N20, RCD075N19, RCD080N25TL, RCD100N19, RCJ050N25, RCJ080N25, RCJ081N20, RCJ100N25
Keywords - RCD041N25 MOSFET specs
RCD041N25 cross reference
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RCD041N25 replacement
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