All MOSFET. RCD041N25 Datasheet

 

RCD041N25 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RCD041N25
   Marking Code: C41N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: SC-63

 RCD041N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RCD041N25 Datasheet (PDF)

 ..1. Size:363K  rohm
 rcd041n25.pdf

RCD041N25 RCD041N25

RCD041N25 Nch 250V 4.0A Power MOSFET Data SheetlOutlineVDSS250VCPT3(SC-63)RDS(on) (Max.)1300mW(3) ID4.0A(2) (1) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Drive circuits can be simple.(3) Source 4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100%

 9.1. Size:1073K  rohm
 rcd040n25tl.pdf

RCD041N25 RCD041N25

Data Sheet10V Drive Nch MOSFET RCD040N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

 9.2. Size:1072K  rohm
 rcd040n25.pdf

RCD041N25 RCD041N25

Data Sheet10V Drive Nch MOSFET RCD040N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

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History: SM4023NSKP | SM4024NSK | IPP50R500CE | IPP057N06N3G

 

 
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