RCD075N19 PDF and Equivalents Search

 

RCD075N19 Specs and Replacement

Type Designator: RCD075N19

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 190 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.336 Ohm

Package: SC-63

RCD075N19 substitution

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RCD075N19 datasheet

 ..1. Size:363K  rohm
 rcd075n19.pdf pdf_icon

RCD075N19

RCD075N19 Nch 190V 7.5A Power MOSFET Datasheet lOutline VDSS 190V CPT3 (SC-63) RDS(on) (Max.) 336mW (3) ID 7.5A (2) (1) PD 20W lFeatures lInner circuit 1) Low voltage drive (4V drive). (1) Gate 2) Low on-resistance. (2) Drain (3) Source 3) Fast switching speed. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead p... See More ⇒

 7.1. Size:1151K  rohm
 rcd075n20.pdf pdf_icon

RCD075N19

Data Sheet 10V Drive Nch MOSFET RCD075N20 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. 2.3 0.5 1.0 5) Parallel use is easy. Application Switching Packaging spe... See More ⇒

Detailed specifications: HY1506B, JCS18N50WH, ME04N25, ME04N25G, SiS412DN, RCD040N25TL, RCD041N25, RCD051N20, AON6414A, RCD080N25TL, RCD100N19, RCJ050N25, RCJ080N25, RCJ081N20, RCJ100N25, RCJ120N20, RCJ120N25

Keywords - RCD075N19 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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