All MOSFET. RCD075N19 Datasheet

 

RCD075N19 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RCD075N19
   Marking Code: C07N19
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.336 Ohm
   Package: SC-63

 RCD075N19 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RCD075N19 Datasheet (PDF)

 ..1. Size:363K  rohm
 rcd075n19.pdf

RCD075N19 RCD075N19

RCD075N19 Nch 190V 7.5A Power MOSFET DatasheetlOutlineVDSS190V CPT3(SC-63)RDS(on) (Max.)336mW(3) ID7.5A(2) (1) PD20WlFeatures lInner circuit1) Low voltage drive (4V drive).(1) Gate 2) Low on-resistance.(2) Drain (3) Source 3) Fast switching speed.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead p

 7.1. Size:1151K  rohm
 rcd075n20.pdf

RCD075N19 RCD075N19

Data Sheet10V Drive Nch MOSFET RCD075N20 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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