All MOSFET. RCD080N25TL Datasheet

 

RCD080N25TL Datasheet and Replacement


   Type Designator: RCD080N25TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SC-63
 

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RCD080N25TL Datasheet (PDF)

 ..1. Size:1152K  rohm
 rcd080n25tl.pdf pdf_icon

RCD080N25TL

Data Sheet10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

 5.1. Size:1152K  rohm
 rcd080n25.pdf pdf_icon

RCD080N25TL

Data Sheet10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

Datasheet: JCS18N50WH , ME04N25 , ME04N25G , SiS412DN , RCD040N25TL , RCD041N25 , RCD051N20 , RCD075N19 , IRFP250N , RCD100N19 , RCJ050N25 , RCJ080N25 , RCJ081N20 , RCJ100N25 , RCJ120N20 , RCJ120N25 , RCJ160N20 .

History: SSPL5505

Keywords - RCD080N25TL MOSFET datasheet

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