All MOSFET. RCD080N25TL Datasheet

 

RCD080N25TL Datasheet and Replacement


   Type Designator: RCD080N25TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SC-63
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RCD080N25TL Datasheet (PDF)

 ..1. Size:1152K  rohm
 rcd080n25tl.pdf pdf_icon

RCD080N25TL

Data Sheet10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

 5.1. Size:1152K  rohm
 rcd080n25.pdf pdf_icon

RCD080N25TL

Data Sheet10V Drive Nch MOSFET RCD080N25 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.650.9 2.3(1) (2) (3)4) Drive circuits can be simple. 2.3 0.51.05) Parallel use is easy. ApplicationSwitching Packaging spe

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