RCJ080N25 Specs and Replacement
Type Designator: RCJ080N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SC-83
RCJ080N25 substitution
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RCJ080N25 datasheet
rcj080n25.pdf
RCJ080N25 Nch 250V 8.0A Power MOSFET Datasheet lOutline (2) VDSS 250V LPT(S) (SC-83) RDS(on) (Max.) 600mW ID 8.0A (1) PD 35W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche t... See More ⇒
rcj081n20.pdf
RCJ081N20 Nch 200V 8.0A Power MOSFET Datasheet lOutline (2) VDSS 200V LPT(S) (SC-83) RDS(on) (Max.) 770mW ID 8.0A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche ... See More ⇒
rcj081n20.pdf
isc N-Channel MOSFET Transistor RCJ081N20 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.77 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
Detailed specifications: SiS412DN, RCD040N25TL, RCD041N25, RCD051N20, RCD075N19, RCD080N25TL, RCD100N19, RCJ050N25, 8205A, RCJ081N20, RCJ100N25, RCJ120N20, RCJ120N25, RCJ160N20, RCJ200N20, RCJ220N25, RCJ300N20
Keywords - RCJ080N25 MOSFET specs
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History: TMP4N65
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