RCJ100N25 Specs and Replacement
Type Designator: RCJ100N25
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: SC-83
RCJ100N25 substitution
- MOSFET ⓘ Cross-Reference Search
RCJ100N25 datasheet
rcj100n25.pdf
RCJ100N25 Nch 250V 10A Power MOSFET Datasheet lOutline (2) VDSS 250V LPT(S) (SC-83) RDS(on) (Max.) 320mW ID 10A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche te... See More ⇒
rcj100n25.pdf
isc N-Channel MOSFET Transistor RCJ100N25 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 320m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: RCD041N25, RCD051N20, RCD075N19, RCD080N25TL, RCD100N19, RCJ050N25, RCJ080N25, RCJ081N20, IRFP250N, RCJ120N20, RCJ120N25, RCJ160N20, RCJ200N20, RCJ220N25, RCJ300N20, RCJ510N25, RCJ700N20
Keywords - RCJ100N25 MOSFET specs
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