RCJ160N20 Specs and Replacement
Type Designator: RCJ160N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: SC-83
RCJ160N20 substitution
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RCJ160N20 datasheet
rcj160n20.pdf
RCJ160N20 Nch 200V 16A Power MOSFET Datasheet lOutline (2) VDSS 200V LPT(S) (SC-83) RDS(on) (Max.) 180mW ID 16A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche t... See More ⇒
rcj160n20.pdf
isc N-Channel MOSFET Transistor RCJ160N20 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 180m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
Detailed specifications: RCD080N25TL, RCD100N19, RCJ050N25, RCJ080N25, RCJ081N20, RCJ100N25, RCJ120N20, RCJ120N25, AON7408, RCJ200N20, RCJ220N25, RCJ300N20, RCJ510N25, RCJ700N20, RCX051N25, RCX081N20, RCX100N25
Keywords - RCJ160N20 MOSFET specs
RCJ160N20 cross reference
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RCJ160N20 substitution
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History: TMP4N65 | RCJ100N25
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