All MOSFET. RCJ160N20 Datasheet

 

RCJ160N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RCJ160N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.25 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 26 nC
   trⓘ - Rise Time: 47 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: SC-83

 RCJ160N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RCJ160N20 Datasheet (PDF)

 ..1. Size:440K  rohm
 rcj160n20.pdf

RCJ160N20 RCJ160N20

RCJ160N20 Nch 200V 16A Power MOSFET DatasheetlOutline(2) VDSS200VLPT(S)(SC-83)RDS(on) (Max.)180mWID16A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche t

 ..2. Size:255K  inchange semiconductor
 rcj160n20.pdf

RCJ160N20 RCJ160N20

isc N-Channel MOSFET Transistor RCJ160N20FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 180m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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