RCJ300N20 Specs and Replacement
Type Designator: RCJ300N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 160 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SC-83
RCJ300N20 substitution
- MOSFET ⓘ Cross-Reference Search
RCJ300N20 datasheet
rcj300n20.pdf
RCJ300N20 Nch 200V 30A Power MOSFET Datasheet lOutline (2) VDSS 200V LPT(S) (SC-83) RDS(on) (Max.) 80mW ID 30A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain 3) Drive circuits can be simple. (3) Source 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche test... See More ⇒
rcj300n20.pdf
isc N-Channel MOSFET Transistor RCJ300N20 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
Detailed specifications: RCJ080N25, RCJ081N20, RCJ100N25, RCJ120N20, RCJ120N25, RCJ160N20, RCJ200N20, RCJ220N25, 2N7002, RCJ510N25, RCJ700N20, RCX051N25, RCX081N20, RCX100N25, RCX200N20, RCX220N25, RCX300N20
Keywords - RCJ300N20 MOSFET specs
RCJ300N20 cross reference
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