All MOSFET. RCX051N25 Datasheet

 

RCX051N25 Datasheet and Replacement


   Type Designator: RCX051N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.5 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.136 Ohm
   Package: TO-220FM
 

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RCX051N25 Datasheet (PDF)

 ..1. Size:405K  rohm
 rcx051n25.pdf pdf_icon

RCX051N25

RCX051N25 Nch 250V 5.0A Power MOSFET DatasheetlOutlineVDSS250V TO-220FMRDS(on) (Max.)1360mWID5.0A(3) PD30W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Drive circuits can be simple.4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche tested

 ..2. Size:251K  inchange semiconductor
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RCX051N25

isc N-Channel MOSFET Transistor RCX051N25FEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 1.36(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:1218K  rohm
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RCX051N25

Data Sheet10V Drive Nch MOSFET RCX050N25 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1) Low on-resistance.1.21.32) Low input capacitance.3) High ESD.0.82.54 2.54 0.75 2.6(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage BulkTypeCode -1Basic ordering un

Datasheet: RCJ120N20 , RCJ120N25 , RCJ160N20 , RCJ200N20 , RCJ220N25 , RCJ300N20 , RCJ510N25 , RCJ700N20 , 5N60 , RCX081N20 , RCX100N25 , RCX200N20 , RCX220N25 , RCX300N20 , RCX510N25 , RCX511N25 , RCX700N20 .

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