RFD16N06LESM Specs and Replacement
Type Designator: RFD16N06LESM
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: TO252AA
RFD16N06LESM substitution
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RFD16N06LESM datasheet
rfd16n06lesm.pdf
RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFETs 16A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 a modern process. This process, which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI integrated circuits gives optimum utilization of silicon, resu... See More ⇒
rfd16n06le.pdf
RFD16N06LE www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no... See More ⇒
rfd16n05l-lsm.pdf
RFD16N05L, RFD16N05LSM Data Sheet December 2003 16A, 50V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFETs 16A, 50V These are N-Channel logic level power MOSFETs rDS(ON) = 0.047 manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati... See More ⇒
Detailed specifications: RFD15P06SM, RFD16N03L, RFD16N03LSM, RFD16N05, RFD16N05L, RFD16N05LSM, RFD16N05SM, RFD16N06LE, 20N60, RFD3055, RFD3055LE, RFD3055LESM, RFD3055SM, RFD3N08L, RFD3N08LSM, RFD4N06L, RFD4N06LSM
Keywords - RFD16N06LESM MOSFET specs
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