RFD16N06LESM - Даташиты. Аналоги. Основные параметры

RFD16N06LESMData Sheet September 200216A, 60V, 0.047 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 16A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047a modern process. This process, which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI integrated circuits gives optimum utilization of silicon, resu

RFD16N06LEwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

RFD16N05L, RFD16N05LSMData Sheet December 200316A, 50V, 0.047 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 16A, 50VThese are N-Channel logic level power MOSFETs rDS(ON) = 0.047manufactured using the MegaFET process. This process, UIS SOA Rating Curve (Single Pulse)which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati

RFD16N05, RFD16N05SMData Sheet November 200316A, 50V, 0.047 Ohm, N-Channel Power FeaturesMOSFETs 16A, 50VThe RFD16N05 and RFD16N05SM N-channel power rDS(ON) = 0.047MOSFETs are manufactured using the MegaFET process. Temperature Compensating PSPICE ModelThis process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

RFD16N03L,S E M I C O N D U C T O RRFD16N03LSM16A, 30V, Avalanche Rated N-Channel Logic LevelDecember 1995 Enhancement-Mode Power MOSFETsFeatures PackagingJEDEC TO-251AA 16A, 30VSOURCE rDS(ON) = 0.022DRAINGATE Temperature Compensating PSPICE ModelDRAIN (FLANGE) Can be Driven Directly from CMOS, NMOS,and TTL Circuits Peak Current vs Pulse Width C

RFD16N05LSM9Awww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwi