All MOSFET. RDD023N50 Datasheet

 

RDD023N50 Datasheet and Replacement


   Type Designator: RDD023N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5.4 Ohm
   Package: SC-63
 

 RDD023N50 substitution

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RDD023N50 Datasheet (PDF)

 ..1. Size:606K  rohm
rdd023n50.pdf pdf_icon

RDD023N50

RDD023N50 Nch 500V 2A Power MOSFET DatasheetlOutlineVDSS500V CPT3(SC-63)RDS(on) (Max.)5.4W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

 9.1. Size:604K  rohm
rdd022n50.pdf pdf_icon

RDD023N50

RDD022N50 Nch 500V 2A Power MOSFET DatasheetlOutlineVDSS500V CPT3(SC-63)RDS(on) (Max.)5.4W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

 9.2. Size:534K  rohm
rdd020n60.pdf pdf_icon

RDD023N50

Data Sheet10V Drive Nch MOSFET RDD020N60 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.65(1) Gate0.9 2.3(1) (2) (3)4) Drive circuits can be simple. (2) Drain 2.3 0.51.0(3) Source5) Parallel use is easy. Applicati

 9.3. Size:754K  rohm
rdd022n60.pdf pdf_icon

RDD023N50

RDD022N60 Nch 600V 2A Power MOSFET DatasheetlOutlineVDSS600V CPT3(SC-63)RDS(on) (Max.)6.7W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

Datasheet: RCX220N25 , RCX300N20 , RCX510N25 , RCX511N25 , RCX700N20 , RDD020N60 , RDD022N50 , RDD022N60 , IRF530 , RDD050N20 , RDN050N20 , RDN100N20 , RDN120N25 , RDN150N20 , RDR005N25 , R5005CNX , R5007FNX .

History: RU4089R | IRF7324PBF-1

Keywords - RDD023N50 MOSFET datasheet

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