RDD023N50 PDF and Equivalents Search

 

RDD023N50 Specs and Replacement

Type Designator: RDD023N50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5.4 Ohm

Package: SC-63

RDD023N50 substitution

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RDD023N50 datasheet

 ..1. Size:606K  rohm
 rdd023n50.pdf pdf_icon

RDD023N50

RDD023N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V CPT3 (SC-63) RDS(on) (Max.) 5.4W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. ... See More ⇒

 9.1. Size:604K  rohm
 rdd022n50.pdf pdf_icon

RDD023N50

RDD022N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V CPT3 (SC-63) RDS(on) (Max.) 5.4W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. ... See More ⇒

 9.2. Size:534K  rohm
 rdd020n60.pdf pdf_icon

RDD023N50

Data Sheet 10V Drive Nch MOSFET RDD020N60 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 (1) Gate 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. (2) Drain 2.3 0.5 1.0 (3) Source 5) Parallel use is easy. Applicati... See More ⇒

 9.3. Size:754K  rohm
 rdd022n60.pdf pdf_icon

RDD023N50

RDD022N60 Nch 600V 2A Power MOSFET Datasheet lOutline VDSS 600V CPT3 (SC-63) RDS(on) (Max.) 6.7W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. ... See More ⇒

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Detailed specifications: RCX220N25, RCX300N20, RCX510N25, RCX511N25, RCX700N20, RDD020N60, RDD022N50, RDD022N60, IRF1010E, RDD050N20, RDN050N20, RDN100N20, RDN120N25, RDN150N20, RDR005N25, R5005CNX, R5007FNX

Keywords - RDD023N50 MOSFET specs

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