RDD023N50 - параметры транзистора MOSFET, его аналоги, datasheet

RDD023N50 Datasheet (PDF)

..1. Size:606K rohm
rdd023n50.pdf pdf_icon

RDD023N50 Nch 500V 2A Power MOSFET DatasheetlOutlineVDSS500V CPT3(SC-63)RDS(on) (Max.)5.4W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

9.1. Size:604K rohm
rdd022n50.pdf pdf_icon

RDD022N50 Nch 500V 2A Power MOSFET DatasheetlOutlineVDSS500V CPT3(SC-63)RDS(on) (Max.)5.4W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

9.2. Size:534K rohm
rdd020n60.pdf pdf_icon

Data Sheet10V Drive Nch MOSFET RDD020N60 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) High-speed switching.0.753) Wide range of SOA.0.65(1) Gate0.9 2.3(1) (2) (3)4) Drive circuits can be simple. (2) Drain 2.3 0.51.0(3) Source5) Parallel use is easy. Applicati

9.3. Size:754K rohm
rdd022n60.pdf pdf_icon

RDD022N60 Nch 600V 2A Power MOSFET DatasheetlOutlineVDSS600V CPT3(SC-63)RDS(on) (Max.)6.7W(SOT-428)ID2A(1) (2) (3) PD20WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.

Другие MOSFET... RCX220N25 , RCX300N20 , RCX510N25 , RCX511N25 , RCX700N20 , RDD020N60 , RDD022N50 , RDD022N60 , IRF530 , RDD050N20 , RDN050N20 , RDN100N20 , RDN120N25 , RDN150N20 , RDR005N25 , R5005CNX , R5007FNX .