RDR005N25 PDF and Equivalents Search

 

RDR005N25 Specs and Replacement

Type Designator: RDR005N25

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 10 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm

Package: SC-96

RDR005N25 substitution

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RDR005N25 datasheet

 ..1. Size:399K  rohm
 rdr005n25.pdf pdf_icon

RDR005N25

RDR005N25 Nch 250V 0.5A Power MOSFET Datasheet lOutline VDSS 250V (3) TSMT3 (SC-96) RDS(on) (Max.) 8.8W (1) ID 0.5A PD 1.0W (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Source 3) Drive circuits can be simple. (3) Drain 4) Parallel use is easy. *1 BODY DIODE *2 ESD PROTECTION DIODE 5) Pb-free lead plating ; RoHS compl... See More ⇒

Detailed specifications: RDD022N50, RDD022N60, RDD023N50, RDD050N20, RDN050N20, RDN100N20, RDN120N25, RDN150N20, AON7506, R5005CNX, R5007FNX, R5009FNJ, R5011FNJ, R5016FNJ, R5021ANJ, R520, R521

Keywords - RDR005N25 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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