All MOSFET. RDR005N25 Datasheet

 

RDR005N25 Datasheet and Replacement


   Type Designator: RDR005N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.8 Ohm
   Package: SC-96
 

 RDR005N25 substitution

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RDR005N25 Datasheet (PDF)

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RDR005N25

RDR005N25 Nch 250V 0.5A Power MOSFET DatasheetlOutlineVDSS250V(3) TSMT3(SC-96)RDS(on) (Max.)8.8W(1) ID0.5APD1.0W(2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Source 3) Drive circuits can be simple.(3) Drain 4) Parallel use is easy.*1 BODY DIODE *2 ESD PROTECTION DIODE 5) Pb-free lead plating ; RoHS compl

Datasheet: RDD022N50 , RDD022N60 , RDD023N50 , RDD050N20 , RDN050N20 , RDN100N20 , RDN120N25 , RDN150N20 , IRFP250 , R5005CNX , R5007FNX , R5009FNJ , R5011FNJ , R5016FNJ , R5021ANJ , R520 , R521 .

History: BRB80N08

Keywords - RDR005N25 MOSFET datasheet

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