R5007FNX PDF and Equivalents Search

 

R5007FNX Specs and Replacement

Type Designator: R5007FNX

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-220FM

R5007FNX substitution

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R5007FNX datasheet

 ..1. Size:3129K  rohm
 r5007fnx.pdf pdf_icon

R5007FNX

R5007FNX Datasheet Nch 500V 7A Power MOSFET lOutline l TO-220FM VDSS 500V RDS(on)(Max.) 1.3 ID 7A PD 40W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed t... See More ⇒

 9.1. Size:267K  rohm
 r5007anj.pdf pdf_icon

R5007FNX

10V Drive Nch MOSFET R5007ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 1.24 2) Fast switching speed. 3) Wide SOA (safe operating area). 2.54 0.4 0.78 4) Gate-source voltage (VGSS) guaranteed to be 30V. 2.7 5.08 (1) Base (Gate) (1) (2) (3) 5) Drive circuits can be simple. (2) Collector (Drain) 6)... See More ⇒

 9.2. Size:280K  rohm
 r5007anx.pdf pdf_icon

R5007FNX

10V Drive Nch MOSFET R5007ANX Structure Dimensions (Unit mm) Silicon N-channel MOSFET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 2) Fast switching speed. 1.2 3) Wide SOA (safe operating area). 1.3 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. 0.8 6) Parallel use is easy. (1)Base 2.54 2.54 0.75 2.6 ... See More ⇒

Detailed specifications: RDD023N50, RDD050N20, RDN050N20, RDN100N20, RDN120N25, RDN150N20, RDR005N25, R5005CNX, IRFP450, R5009FNJ, R5011FNJ, R5016FNJ, R5021ANJ, R520, R521, R6002END, R6004END

Keywords - R5007FNX MOSFET specs

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