R5011FNJ MOSFET Datasheet: N-Ch, 500V, 11A. Full specification with pinout and replacement list

R5011FNJ Specs and Replacement

Type Designator: R5011FNJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm

Package: LPTS

R5011FNJ substitution

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R5011FNJ datasheet

..1. Size:3269K rohm
r5011fnj.pdf pdf_icon

R5011FNJ Datasheet Nch 500V 11A Power MOSFET lOutline l LPT(S) VDSS 500V RDS(on)(Max.) 0.52 ID 11A PD 50W lInner circuit l lFeatures l 1) Fast reverse recovery time (trr). 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to ... See More ⇒

7.1. Size:283K rohm
r5011fnx.pdf pdf_icon

10V Drive Nch MOSFET R5011FNX Structure Dimensions (Unit mm) Silicon N-channel MOSFET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Fast reverse recovery time. 2) Low on-resistance. 1.2 1.3 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8 5) Drive circuits can be simple. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain (1) (2) (3) 6) Parallel u... See More ⇒

9.1. Size:263K rohm
r5011anj.pdf pdf_icon

10V Drive Nch MOSFET R5011ANJ Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) Fast switching speed. 2.54 0.4 0.78 2.7 3) Gate-source voltage (VGSS) guaranteed to be 30V. 5.08 (1) Gate (1) (2) (3) 4) Drive circuits can be simple. (2) Drain (3) Source Each lead has same dimensions 5) Parallel use is... See More ⇒

9.2. Size:232K rohm
r5011anx.pdf pdf_icon

R5011ANX Transistors 10V Drive Nch MOSFET R5011ANX Dimensions (Unit mm) Structure Silicon N-channel MOSFET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Fast switching speed. 1.3 3) Gate-source voltage (VGSS) guaranteed to be 30V. 0.8 (1)Base 4) Drive circuits can be simple. 2.54 2.54 0.75 2.6 (2)Collector (1) (2) (3) 5) Parallel use i... See More ⇒

Detailed specifications: RDN050N20, RDN100N20, RDN120N25, RDN150N20, RDR005N25, R5005CNX, R5007FNX, R5009FNJ, AO4407, R5016FNJ, R5021ANJ, R520, R521, R6002END, R6004END, R6004ENJ, R6004ENX