All MOSFET. R6015ENZ Datasheet

 

R6015ENZ Datasheet and Replacement


   Type Designator: R6015ENZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO-3PF
 

 R6015ENZ substitution

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R6015ENZ Datasheet (PDF)

 ..1. Size:871K  rohm
r6015enz.pdf pdf_icon

R6015ENZ

R6015ENZ Nch 600V 15A Power MOSFET Data SheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.290WID15A(1) (2) PD120W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead

 ..2. Size:265K  inchange semiconductor
r6015enz.pdf pdf_icon

R6015ENZ

isc N-Channel MOSFET Transistor R6015ENZFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 290m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:797K  rohm
r6015enx.pdf pdf_icon

R6015ENZ

R6015ENX Nch 600V 15A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.290WID15A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

 7.2. Size:769K  rohm
r6015enj.pdf pdf_icon

R6015ENZ

R6015ENJ Nch 600V 15A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.290WID15A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-

Datasheet: R6007ENX , R6009ENJ , R6009ENX , R6011ENJ , R6011ENX , R6012FNJ , R6015ENJ , R6015ENX , K2611 , R6015FNJ , R6020ENJ , R6020ENX , R6020ENZ , R6020ENZ1 , R6020FNJ , R6024ENJ , R6024ENX .

History: EMF20B02V | NCE1520KA | KI8810DS | SFW280N600C4 | STP6N95K5 | FCD1300N80Z

Keywords - R6015ENZ MOSFET datasheet

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