R6015ENZ - описание и поиск аналогов

R6015ENZ Nch 600V 15A Power MOSFET Data Sheet lOutline VDSS 600V TO-3PF RDS(on) (Max.) 0.290W ID 15A (1) (2) PD 120W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead

isc N-Channel MOSFET Transistor R6015ENZ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

R6015ENX Nch 600V 15A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.290W ID 15A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

R6015ENJ Nch 600V 15A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.290W ID 15A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-

isc N-Channel MOSFET Transistor R6015ENX FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6015ENJ FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 290m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo